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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 4A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：70mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：305pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6JA2TCR is a dual P-channel silicon MOSFET manufactured by ROHM Semiconductor, housed in an 8-terminal DFN-2020-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 4 A. The device exhibits a typical on-resistance of 70 mΩ at a gate-source voltage of -4.5 V, with a maximum gate-source voltage rating of ±20 V. Key dynamic parameters include a total gate charge of 6.7 nC, a rise time of 9.1 ns, and a fall time of 13 ns. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 2 W.
Feature Summary
- Dual P-channel configuration integrated into a compact DFN-2020-8 surface-mount package for space-constrained designs.
- Low on-resistance characteristics optimized for efficient power switching applications.
- Enhanced thermal performance supporting operation up to 150°C junction temperature.
Applications
- General-purpose switching circuits
- Power management modules
- DC-DC converter stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the designated documentation portal prior to integration. Cross-reference the part number with authorized distributor catalogs to validate current availability and manufacturing lifecycle status.
Selection Notes
Select this component when a dual P-channel topology is required within a DFN-2020-8 footprint. Ensure the application voltage does not exceed the 30 V drain-source limit. Verify that the gate drive signal remains within the ±20 V absolute maximum rating to prevent dielectric breakdown. Consider the 70 mΩ on-resistance for thermal management calculations under expected load currents.
Part Context
This part belongs to ROHM's series of small-signal power MOSFETs designed for surface-mount technology. The UT6JA2TCR utilizes standard silicon planar technology. It is distinct from N-channel variants and complementary pairs within the same package family, specifically offering two independent P-channel devices for differential or high-side switching configurations.
Replacement Considerations
The UT6JA2TCR is functionally equivalent to the UT6JA2 (without the TCR suffix) regarding electrical specifications. Verify pin compatibility and package dimensions before substitution. No other direct cross-model replacements are confirmed in the provided data.
