UT6K30TCR

Overview

The UT6K30TCR is a dual N-channel power MOSFET manufactured by ROHM Semiconductor. It features a DFN2020-8 surface mount package and operates with a drain-source voltage of 60V. The device supports a continuous drain current of 15A and exhibits a low on-resistance of 14mΩ. Key electrical parameters include a gate-source voltage rating of ±20V, a threshold voltage of 2.1V, and a gate charge of 17nC. Thermal performance includes a power dissipation of 2W and an operating temperature range from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration in a compact surface-mount package
• Low on-resistance for efficient switching applications
• Enhanced thermal stability with high maximum junction temperature

Applications

• DC-DC converter circuits
• General-purpose switching applications
• Power management modules

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches design requirements. Check for obsolescence status as indicated by lifecycle notices. Ensure storage conditions comply with moisture sensitivity levels. Validate datasheet revisions against current production batches.

Selection Notes

Evaluate the 60V breakdown voltage against circuit peak stresses. Assess the 14mΩ on-resistance for thermal management needs. Consider the 15A current capability for load requirements. Review the DFN2020 footprint for PCB layout constraints. Compare switching speeds with system timing specifications.

Part Context

This component belongs to ROHM's series of dual MOSFET arrays designed for space-constrained power electronics. The DFN2020 package provides a balance between thermal performance and board area efficiency. It targets applications requiring reliable switching with minimal parasitic effects.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.