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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.5A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.5A
- Rds On (Max) @ Id, Vgs：42mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：450pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6K3TCR is a dual N-channel silicon power MOSFET manufactured by ROHM Semiconductor, housed in a DFN2020-8D surface-mount package. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 5.5 A. The device exhibits a typical on-resistance (Rds(on)) of 42 mOhms at a gate-source voltage (Vgs) of 2.5 V. Key electrical parameters include a total gate charge (Qg) of 4 nC, a maximum power dissipation (Pd) of 2 W, and an operating temperature range from -55 °C to +150 °C. The component utilizes an enhancement mode configuration with a threshold voltage (Vgs(th)) of 1.5 V.
Feature Summary
- Low on-resistance for efficient power handling
- Compact surface-mount footprint suitable for space-constrained designs
- Lead-free plating compliant with RoHS standards
Applications
- Load switches in mobile phone circuits
- Battery switches for portable devices
- DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the component meets the required environmental standards for the intended application, as automotive usage is explicitly not recommended for this standard-grade part. Cross-reference the datasheet revision date to ensure compatibility with current design constraints.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact DFN2020-8D footprint. The low gate charge and fast switching characteristics make it suitable for high-frequency applications. Ensure the drive voltage aligns with the specified 2.5 V or 4.5 V thresholds to achieve optimal on-resistance performance without exceeding the maximum gate-source voltage limits.
Part Context
This part belongs to ROHM's UT6K series of medium-power MOSFETs designed for small mobile devices. It serves as a successor or alternative to older packages like SOT-363, offering higher current capacity in a similar thermal profile. The series emphasizes miniaturization while maintaining robust electrical performance for consumer electronics power management.
Replacement Considerations
The US6K1 is listed as a similar specification part but uses a different SOT-363T package. Verify pinout compatibility and thermal resistance differences before substitution. No other direct cross-references are provided in the source data.
