UT6KE5TCR

Overview

The UT6KE5TCR is a dual N-channel power MOSFET manufactured by ROHM Semiconductor. It features a DFN2020-8D (HUML2020L8) surface-mount package with eight terminals. The device supports a drain-source voltage of 100V and a continuous drain current of ±2.0A. The maximum static drain-source on-state resistance is 207mΩ at VGS=10V and 345mΩ at VGS=4.5V. Power dissipation is rated at 2.0W, with a junction temperature range from -55°C to +150°C.

Feature Summary

• Low on-resistance for efficient switching performance
• Compact surface mount package design
• Lead-free plating compliant with RoHS standards
• Halogen-free material composition

Applications

• Switching circuits
• DC/DC converters

Procurement Notes

Verify the specific ordering suffix TCR corresponds to the required tape-and-reel packaging configuration before procurement. Confirm that the component meets the standard-grade classification requirements for non-automotive applications. Ensure the final assembly process accounts for the electrostatic sensitivity warnings provided in the manufacturer's documentation.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution with 100V breakdown capability. Evaluate the thermal resistance characteristics against the expected ambient operating conditions to ensure the junction temperature remains within safe limits. Consider the gate threshold voltage variations when designing the drive circuitry for optimal switching efficiency.

Part Context

This part belongs to the UT6KE5 series of dual N-channel power MOSFETs. It utilizes the HUML2020L8 package code, which is physically equivalent to the DFN2020-8D form factor. The marking code KE5 identifies the specific device variant within the manufacturer's product lineup.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Verify compatibility based on matching electrical parameters such as VDSS, ID, RDS(on), and package dimensions.