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Product Detailed Parameters
- Description：MOSFET N/P-CH 100V 2A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta), 1A (Ta)
- Rds On (Max) @ Id, Vgs：207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.8nC @ 10V, 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：90pF @ 50V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6ME5TCR is a dual complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel transistor within a single HUML2020L8 (DFN2020-8D) surface-mount package. The device features a drain-source voltage rating of ±100V with continuous drain currents of +2.0A for the N-channel and -1.0A for the P-channel. Maximum on-state resistance values are specified at 207mΩ for the N-channel and 840mΩ for the P-channel. It supports a maximum power dissipation of 2.0W and operates across a junction temperature range from -55°C to +150°C.
Feature Summary
- Complementary dual configuration combining N-channel and P-channel transistors in a compact footprint
- Low on-state resistance characteristics optimized for efficient switching applications
- RoHS compliant construction utilizing lead-free plating and halogen-free materials
Applications
- General purpose switching circuits in consumer electronics
- Power management modules for office automation equipment
- Signal control stages in audio and video apparatus
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS directives and halogen-free requirements for your manufacturing process. Ensure storage conditions remain within recommended humidity and temperature limits to maintain solderability before assembly.
Selection Notes
Select this component when a small surface-mount solution requires both N-channel and P-channel switching capabilities. Evaluate thermal resistance constraints carefully as the DFN2020-8D package has limited heat dissipation capacity. Verify gate drive voltage levels align with the specified threshold voltages for reliable turn-on performance.
Part Context
This part belongs to the UT6ME5 series of complementary MOSFETs designed for space-constrained designs. The TCR suffix indicates the product is supplied in an embossed tape reel format suitable for automated surface-mount assembly processes.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specifications.
