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Product Detailed Parameters
- Description：RF TRANS NPN 25V 860MHZ 55FT
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：470MHz ~ 860MHz
- Noise Figure (dB Typ @ f)：-
- Gain：12dB
- Power - Max：17W
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 250mA, 5V
- Current - Collector (Ic) (Max)：1.2A
- Operating Temperature：200°C (TJ)
- Mounting Type：Chassis, Stud Mount
- Package / Case：55FT
- Supplier Device Package：55FT
- Grade：-
- Qualification：-
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Overview
The UTV020 is a discontinued NPN bipolar RF transistor manufactured by Microsemi Corporation. It operates within a frequency range of 470MHz to 860MHz with a transition frequency up to 860MHz. The device supports a maximum collector current of 1.2A and a collector-emitter breakdown voltage of 25V. It delivers a maximum power output of 17W and provides a gain of 12dB. The component utilizes the 55FT package, designed for base and stud mounting, and features a maximum junction temperature rating of 200°C.
Feature Summary
- High-power RF capability with 17W maximum output
- Wideband operation covering 470MHz to 860MHz
- Robust thermal performance with 200°C junction temperature rating
- Designed for base and stud mounting applications
Applications
- RF power amplification in communication systems
- Broadband transmitter stages
- Industrial RF heating equipment
Procurement Notes
This component is officially listed as obsolete with an end-of-life date of April 10, 2017. Verification should confirm availability through surplus channels or authorized distributors holding remaining stock. Engineering teams must validate compatibility with replacement components due to the discontinuation status.
Selection Notes
Designers requiring active procurement should evaluate alternative NPN RF transistors offering similar power handling and frequency ranges. Verify that substitute devices match the 55FT mounting requirements and thermal characteristics. Ensure new selections meet the specific 25V breakdown and 1.2A current constraints of the original design.
Part Context
The UTV020 belongs to the Microsemi family of discrete bipolar RF transistors. These components are engineered for high-frequency power applications where reliability under high thermal stress is critical. The part represents legacy technology from Microsemi's semiconductor portfolio before its acquisition by Microchip Technology.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Engineers must identify equivalent components based on electrical parameters and mechanical footprint compatibility.
