UTV080

$219.99

Description：RF TRANS NPN 28V 860MHZ 55JV
Series：-

SKU:918f0360bf6c Category: Bipolar RF Transistors Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 28V 860MHZ 55JV
Series：-
Mfr：Microsemi Corporation
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：28V
Frequency - Transition：470MHz ~ 860MHz
Noise Figure (dB Typ @ f)：-
Gain：9dB ~ 10dB
Power - Max：65W
DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 500mA, 5V
Current - Collector (Ic) (Max)：2.5A
Operating Temperature：200°C (TJ)
Mounting Type：Channel, DIN Rail Mount
Package / Case：55JV
Supplier Device Package：55JV
Grade：-
Qualification：-

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UTV080

Overview

The UTV080 is a silicon NPN RF bipolar transistor designed for high-power applications in the UHF band. It features a collector-emitter breakdown voltage of 28V and supports a maximum continuous collector current of 2.5A. The device operates within a transition frequency range of 470MHz to 860MHz, delivering a typical power gain of 9dB to 10dB. With a maximum power dissipation capability of 65W, it is housed in a 55JV channel package suitable for DIN rail mounting.

Feature Summary

High-power output capability with 65W dissipation rating
Optimized for UHF frequency bands between 470MHz and 860MHz
Robust thermal design supporting base or stud mounting configurations

Applications

UHF transmitter stages
RF power amplification modules
Industrial radio communication systems

Procurement Notes

Verify component authenticity through authorized Microchip distributors due to obsolete status. Confirm lot traceability and datasheet revisions prior to integration. Ensure mounting hardware compatibility with the 55JV package dimensions. Validate thermal interface materials for optimal heat dissipation under full load conditions.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the VHF/UHF spectrum. Consider the 28V supply constraint and 2.5A current limit when designing bias networks. Evaluate thermal management requirements given the 65W power handling capacity. Compare against newer generations for potential performance improvements.

Part Context

Part of the Microsemi UTV series of silicon NPN RF transistors. Designed for robust performance in demanding RF environments. Manufactured using advanced planar silicon technology. Supports various mounting styles for flexible system integration.