V10K150C-M3/H

Diode Arrays Overview

The V10K150C-M3/H is a high current density surface-mount TMBS (Trench MOS Barrier Schottky) rectifier manufactured by Vishay General Semiconductor. It features a common cathode dual-diode configuration within a FlatPAK 5 x 6 package. The device supports a maximum repetitive peak reverse voltage of 150 V and provides a total average forward current of 10 A, distributed as 5 A per diode. Key electrical characteristics include a typical instantaneous forward voltage of 0.56 V at an ambient temperature of 125 °C with a forward current of 2.5 A, and a peak forward surge current rating of 100 A per diode. The component operates within a junction temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses for high efficiency operation.
• Constructed in a FlatPAK 5 x 6 case with molding compound meeting UL 94 V-0 flammability ratings.
• Terminals feature matte tin plating that is solderable per J-STD-002 and JESD 22-B102 standards.
• Compliant with MSL level 1 requirements per J-STD-020 with a maximum peak reflow temperature of 260 °C.

Diode Arrays Applications

• Low voltage high frequency DC/DC converters
• Freewheeling diodes
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm delivery mode and base quantity. The datasheet lists multiple variants including reel sizes of 7-inch and 13-inch diameters. Confirm whether the required unit weight and preferred package code align with the manufacturing specifications before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when designing circuits requiring a 150 V blocking capability with a combined 10 A current handling capacity in a compact surface-mount footprint. Ensure thermal management strategies account for the specified junction-to-ambient thermal resistance values under free-air conditions or infinite heat sink scenarios to maintain safe operating temperatures.

Diode Arrays Part Context

This part belongs to the V10K series of high current density surface-mount rectifiers from Vishay. The series utilizes Trench MOS Barrier Schottky technology to offer superior performance compared to standard planar devices. The FlatPAK 5 x 6 package provides enhanced thermal conductivity and mechanical stability suitable for automated assembly processes in modern electronic equipment.

Diode Arrays Replacement Considerations

The HM3 suffix variant indicates AEC-Q101 qualification for automotive applications. Verify if the standard M3 version meets the environmental and reliability requirements of the target application before substituting between these suffixes.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage rating?

The maximum repetitive peak reverse voltage (VRRM) is rated at 150 V.

How is the forward current distributed in the common cathode configuration?

The device has a total average forward current of 10 A, which is distributed as 5 A per diode.

What is the typical forward voltage at elevated temperatures?

At an ambient temperature of 125 °C and a forward current of 2.5 A, the typical instantaneous forward voltage is 0.56 V.