V30100C-M3/4W

Diode Arrays Overview

The V30100C-M3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 30 A per device (15 A per diode). The component exhibits an ultra-low forward voltage drop of 0.455 V at 5 A and 0.63 V at 15 A, ensuring high efficiency operation. It supports a peak forward surge current of 160 A and operates within a junction temperature range of -40 to +150 °C. The device utilizes TO-220AB or TO-262AA packages.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• High efficiency operation enabled by ultra-low VF characteristics
• Low thermal resistance for effective heat dissipation
• Halogen-free and RoHS-compliant commercial grade construction

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific package variant required for the design, as the V30100C designation corresponds to the TO-220AB case while VI30100C corresponds to TO-262AA. Confirm that the M3 suffix meets the necessary environmental compliance standards, including halogen-free status and JESD 201 class 1A whisker test requirements. Ensure mounting torque does not exceed 10 in-lbs during assembly.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency switching and low conduction losses. The TMBS technology offers superior performance compared to standard silicon rectifiers. Consider the thermal resistance of 2.5 °C/W per diode when designing heatsinking solutions. Validate the forward voltage characteristics against the specific load current requirements to ensure optimal efficiency.

Diode Arrays Part Context

This part belongs to Vishay's Dual High-Voltage Trench MOS Barrier Schottky Rectifier family. It is designed to replace standard fast recovery or ultra-fast recovery diodes in high-efficiency power conversion applications. The M3 ordering suffix indicates compliance with RoHS directives and halogen-free material specifications, aligning with modern environmental manufacturing standards.

Diode Arrays Replacement Considerations

Direct replacements include the VI30100C-M3/4W for the TO-262AA package variant. Other Vishay TMBS series parts may serve as functional substitutes if electrical ratings match, but pinout and thermal characteristics must be verified.