V40100PGW-M3/4W

Diode Arrays Overview

The V40100PGW-M3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier in a TO-3PW package. It features a 100 V repetitive peak reverse voltage and a total average forward rectified current of 40 A, split as 20 A per diode. The device exhibits an ultra-low forward voltage drop of 0.42 V at 5 A and 0.67 V at 20 A. It supports a peak forward surge current of 250 A and operates within a junction temperature range of -40 °C to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• High efficiency operation suitable for high-frequency applications
• Dual common cathode configuration with robust thermal performance

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the M3 suffix confirms halogen-free, RoHS-compliant status and JESD 201 class 1A whisker test compliance. Confirm the 4W package code corresponds to tube delivery mode. Ensure the TO-3PW mounting torque does not exceed 10 in-lbs during assembly. Validate that the matte tin plated leads meet J-STD-002 solderability requirements for your specific process.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high-current applications up to 20 A per leg. The TMBS technology offers superior forward voltage characteristics compared to standard Schottky diodes. Consider the TO-3PW package for its mechanical robustness and thermal dissipation capabilities in through-hole mounting scenarios.

Diode Arrays Part Context

This part belongs to Vishay's TMBS family, utilizing trench MOS barrier technology to achieve lower forward voltage drops than conventional Schottky rectifiers. The V40100 series is designed for high-efficiency power conversion. The M3 designation indicates environmental compliance, while the PGW suffix specifies the TO-3PW case style and lead configuration.

Diode Arrays Replacement Considerations

Direct replacements must match the 100 V rating, 20 A per diode current capacity, and TO-3PW package. Verify that alternative TMBS or Schottky devices maintain comparable forward voltage characteristics at 20 A to ensure equivalent thermal performance in the design.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy per diode?

The maximum non-repetitive avalanche energy is 250 mJ at a junction temperature of 25 °C with an inductance of 70 mH.

Does the M3 suffix affect the electrical performance?

No, the M3 suffix indicates halogen-free, RoHS-compliant materials and JESD 201 class 1A whisker test compliance without altering the electrical specifications.

What is the typical thermal resistance from junction to case?

The typical thermal resistance is 2.0 °C/W per diode and 1.4 °C/W per device.