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V50100PW-M3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 100V 25A TO-3PW. Review the specifications below when checking this part for your BOM.
The V50100PW-M3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier in a TO-3PW package. It features two common-cathode diodes with a maximum repetitive peak reverse voltage of 100 V and a total average forward rectified current of 50 A (25 A per diode). The device exhibits an ultra-low forward voltage drop, typically 0.39 V at 5 A and 125 °C, or 0.66 V at 25 A and 125 °C. It supports a peak forward surge current of 300 A per diode and operates within a junction temperature range of -40 °C to +150 °C.
Verify the specific ordering suffix against official Vishay documentation to confirm compliance status and packaging details. The M3 suffix indicates halogen-free and RoHS compliance. Confirm that the base part number matches the intended electrical specifications before procurement. Ensure thermal management aligns with the specified derating curves for the target operating environment.
Select this component for designs requiring high current handling and low conduction losses in a through-hole TO-3PW package. The TMBS technology offers superior performance compared to standard Schottky diodes. Consider the thermal resistance characteristics when designing heat sinks. Verify that the 100 V rating meets the circuit's peak reverse voltage requirements under all operating conditions.
This component belongs to Vishay's Dual High-Voltage Trench MOS Barrier Schottky Rectifier series. It utilizes advanced trench technology to achieve lower forward voltage drops while maintaining robust reverse blocking capabilities. The TO-3PW case provides mechanical stability and efficient heat dissipation for high-power applications.
Consult official Vishay substitution guides for verified alternatives. Generic replacements may not match the specific TMBS forward voltage characteristics or thermal performance.
The typical instantaneous forward voltage is 0.48 V at 5 A and 25 °C, and 0.39 V at 5 A and 125 °C.
Yes, the M3 suffix indicates the device is halogen-free and RoHS compliant.
The non-repetitive avalanche energy is 280 mJ per diode at TJ = 25 °C with L = 100 mH.
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