V60D100CHM3/I

Diode Arrays Overview

The V60D100CHM3/I is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features an SMPD (TO-263AC) package with a common cathode configuration, providing two independent diodes per device. The component supports a maximum repetitive peak reverse voltage of 100 V and a total maximum average forward rectified current of 60 A (30 A per diode). Key electrical parameters include a peak forward surge current of 320 A and a typical thermal resistance junction-to-case of 0.95 °C/W per diode. The device operates within a junction temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for ultra-low forward voltage drop and reduced power losses.
• Features a very low profile design suitable for automated placement processes.
• Meets MSL level 1 requirements per J-STD-020 standards.
• AEC-Q101 qualified for automotive application environments.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific suffix 'HM3' confirms AEC-Q101 qualification status against the latest official datasheet revision. Confirm that the SMPD package dimensions align with the target PCB footprint layout. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component when low forward voltage drop at high currents is critical for system efficiency. The dual common cathode configuration allows for compact designs in applications requiring parallel or OR-ing functionality. Verify that the 100 V reverse voltage rating provides adequate margin for the specific circuit's peak inverse voltage spikes.

Diode Arrays Part Context

This part belongs to the eSMP series of high-performance Schottky rectifiers from Vishay. It represents an evolution in Trench MOS technology designed to minimize conduction losses compared to standard barrier Schottky devices. The SMPD package offers improved thermal performance relative to traditional TO-263 variants while maintaining compatibility with standard surface mount assembly lines.

Diode Arrays Replacement Considerations

V60D100C-M3/I

Diode Arrays FAQ

What is the difference between the V60D100C-M3/I and V60D100CHM3/I?

The 'H' suffix in V60D100CHM3/I indicates that the device is AEC-Q101 qualified for automotive applications, whereas the base model without the 'H' may not carry this specific automotive qualification.

What is the maximum junction temperature for this device?

The maximum operating junction temperature (TJ max) for the V60D100CHM3/I is 150 °C.

How is the forward current rated for this dual diode?

The device has a total maximum average forward rectified current of 60 A, which is distributed as 30 A per individual diode within the common cathode package.