V80100PW-M3/4W

Description：DIODE ARR SCHOTT 100V 40A TO-3PW
Series：TMBS®

SKU:f39d8b5f98d3 Category: Diode Arrays Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

V80100PW-M3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 100V 40A TO-3PW. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for V80100PW-M3/4W

Description：DIODE ARR SCHOTT 100V 40A TO-3PW
Series：TMBS®
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：40A
Voltage - Forward (Vf) (Max) @ If：840 mV @ 40 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：1 mA @ 100 V
Operating Temperature - Junction：-40°C ~ 150°C
Mounting Type：Through Hole
Package / Case：TO-3P-3 Full Pack
Supplier Device Package：TO-3PW
Grade：-
Qualification：-

Diode Arrays datasheet and documents for V80100PW-M3/4W

V80100PW-M3/4W

Diode Arrays Overview

The V80100PW-M3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier in a TO-3PW package. It features an 80 A average forward current rating per device and a 100 V repetitive peak reverse voltage. The component utilizes TMBS technology to achieve ultra-low forward voltage drops, specified at 0.43 V at 10 A and 0.64 V at 40 A. It supports a 450 A peak forward surge current and operates within a junction temperature range of -40 °C to +150 °C.

Diode Arrays Feature Summary

Trench MOS Schottky technology for low power losses
Ultra-low forward voltage drop characteristics
High efficiency operation capability

Diode Arrays Applications

High frequency converters
Switching power supplies
Freewheeling diodes
OR-ing diode circuits
DC-to-DC converters
Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm compliance status and packaging details. Confirm that the M3 suffix indicates halogen-free and RoHS directive compliance as stated in the datasheet. Ensure the base part number matches the exact electrical ratings required for the design. Cross-reference thermal resistance values with the intended heatsink configuration.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling and low conduction losses. The TO-3PW package provides robust mechanical mounting and thermal dissipation capabilities. Consider the 150 °C maximum junction temperature limit when designing thermal management systems. Evaluate the 700 mJ non-repetitive avalanche energy rating if transient energy absorption is a requirement.

Diode Arrays Part Context

This device belongs to the V80100 series of dual high-voltage Trench MOS Barrier Schottky rectifiers manufactured by Vishay General Semiconductor. The product line emphasizes high efficiency and low forward voltage drop through advanced semiconductor technology. The TO-3PW case style offers a standardized footprint for through-hole mounting in industrial and commercial power electronics.