VB20200G-E3/8W

Diode Arrays Overview

The VB20200G-E3/8W is a dual high voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes TMBS technology to achieve ultra-low forward voltage drop, specified as 0.62 V at IF = 5 A and 0.71 V at IF = 10 A. The device features a common cathode configuration with two independent diodes housed in a TO-263AB (D2PAK) package. Key electrical ratings include a maximum repetitive peak reverse voltage of 200 V, a total average forward rectified current of 20 A (10 A per diode), and a peak forward surge current of 110 A per diode. The component operates within a junction temperature range of -40 °C to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• High efficiency operation suitable for high frequency converters
• Low thermal resistance for effective heat dissipation
• RoHS compliant construction with matte tin plated leads

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /8W indicates tape and reel packaging containing 800 units per reel, distinct from the tube packaging associated with the /4W suffix. Confirm RoHS compliance status and material categorization details via the official Vishay documentation before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and low conduction losses at moderate voltages. The TO-263AB package facilitates surface mount mounting on printed circuit boards. Ensure thermal management design accounts for the typical thermal resistance of 3.2 °C/W per diode to maintain junction temperatures within the specified operating range under rated load conditions.

Diode Arrays Part Context

This part belongs to the V20200G series of dual high voltage Trench MOS Barrier Schottky rectifiers. The 'VB' prefix specifically identifies the TO-263AB (D2PAK) package variant within the family, which also includes TO-220AB, ITO-220AB, and TO-262AA configurations. All variants share identical electrical characteristics but differ in mechanical form factor and thermal interface properties.

Diode Arrays Replacement Considerations

Direct functional substitutes within the same Vishay series include V20200G-E3/4W (TO-220AB), VF20200G-E3/4W (ITO-220AB), and VI20200G-E3/4W (TO-262AA). When replacing, verify that the alternative package type fits the PCB footprint and thermal requirements of the design.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage rating?

The maximum repetitive peak reverse voltage (VRRM) is 200 V.

How is the forward voltage drop characterized?

The forward voltage drop is ultra-low, typically 0.62 V at 5 A and 0.71 V at 10 A, due to Trench MOS Schottky technology.

What is the thermal resistance of the device?

The typical thermal resistance from junction to case (RθJC) is 3.2 °C/W per diode.