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VB60170G-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 170V 30A TO263AB. Review the specifications below when checking this part for your BOM.
The VB60170G-E3/8W is a dual high voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) package. The device supports a maximum repetitive peak reverse voltage of 170 V and a total maximum average forward rectified current of 60 A, with 30 A per diode. It exhibits an ultra-low forward voltage drop of 0.50 V at 5 A and 0.72 V at 30 A when the junction temperature is 125 °C. The component operates within a junction and storage temperature range of -40 to +175 °C.
Verify the specific ordering suffix /8W to confirm tape and reel packaging containing 800 units per reel. Ensure the base part number matches the dual common cathode configuration. Confirm RoHS compliance and material categorization requirements against project specifications before finalizing procurement orders.
Select this component for designs requiring high surge current capability up to 210 A and low thermal resistance of 1.0 °C/W per diode. Consider the 175 °C maximum operating junction temperature for high-temperature environments. Validate that the 170 V reverse voltage rating aligns with the circuit's peak reverse voltage requirements.
This component belongs to the VB series of dual high voltage Trench MOS Barrier Schottky rectifiers from Vishay. These devices are engineered to replace traditional fast recovery diodes in high-frequency applications, offering superior switching characteristics and lower conduction losses compared to standard silicon rectifiers.
Consult official Vishay documentation for qualified substitute part numbers. Verify pinout compatibility and thermal performance metrics when evaluating alternative components.
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