VEC2315-TL-W

Overview

The VEC2315-TL-W is a dual P-channel power MOSFET manufactured by onsemi using trench technology. It operates with a drain-to-source voltage of -60V and a continuous drain current of -2.5A. The device features low on-resistance, specified at 137mΩ maximum at -10V gate drive and 180mΩ at -4.5V. Packaged in an SOT-28FL (VEC8) format, it includes ESD diode protection for the gate. Key electrical parameters include a total gate charge of 11nC and a junction temperature rating up to 150°C.

Feature Summary

• Dual P-channel configuration integrated into a single low-profile package
• Trench technology designed to minimize gate charge and on-resistance
• Gate structure protected against electrostatic discharge events

Applications

• Motor driver circuits
• Low gate charge driving applications
• Circuits requiring low on-resistance performance

Procurement Notes

Verify the specific ordering suffix 'W' against official documentation to confirm tape and reel specifications. Confirm that the component meets Pb-Free, Halogen Free, and RoHS compliance requirements as stated in the datasheet. Ensure the selected packaging aligns with the required quantity per reel for the manufacturing process.

Selection Notes

Select this component when a dual P-channel solution is required within a compact footprint. The device is suitable for designs needing logic-level compatibility at -4.5V or standard -10V drive levels. Evaluate thermal resistance ratings based on the specific PCB copper area available for heat dissipation during operation.

Part Context

This part belongs to the VEC2315 family of power MOSFETs produced by onsemi. The product utilizes advanced trench technology to achieve optimized switching characteristics and conduction losses. It is distinct from other variants in the series primarily through its specific packaging and marking configuration.

Replacement Considerations

Direct replacements must match the -60V rating, dual P-channel topology, and VEC8 package dimensions. Verify that alternative components offer comparable RDS(on) values at the intended gate drive voltages to maintain circuit efficiency.