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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 3A/2.5A SOT28
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3A, 2.5A
- Rds On (Max) @ Id, Vgs：80mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：505pF @ 20V
- Power - Max：1W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：SOT-28FL/VEC8
- Grade：-
- Qualification：-
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Overview
The VEC2616-TL-H is a complementary dual power MOSFET manufactured by onsemi. It integrates an N-channel and a P-channel device within a single VEC8 package, designed for general-purpose switching applications. The N-channel component features a drain-source breakdown voltage of 60V, a continuous drain current of 3A, and a maximum on-resistance of 80mΩ. The paired P-channel component offers a 60V breakdown voltage, a 2.5A continuous drain current, and a maximum on-resistance of 137mΩ. This configuration supports efficient high-side and low-side driving in compact surface-mount designs.
Feature Summary
- Complementary dual configuration integrating N-channel and P-channel MOSFETs in a single package
- Low on-resistance characteristics optimized for power efficiency
- Surface-mount VEC8 package design for space-constrained applications
Applications
- General-purpose switching devices
- High-side and low-side driver circuits
- Power management modules requiring complementary pairs
Procurement Notes
Verify the specific suffix TL-H against the official datasheet to confirm pinout and electrical specifications match the target design requirements. Confirm availability status with authorized distributors as production lifecycles may change. Ensure compliance with RoHS directives if required by the end product regulations.
Selection Notes
Select this component when a matched N-channel and P-channel pair is needed for synchronous rectification or bridge configurations. The 60V rating suits low-voltage DC-DC converters and load switches. Compare the 80mΩ and 137mΩ on-resistances against thermal dissipation limits in the VEC8 package for the intended current load.
Part Context
This part belongs to the VEC2616 series from onsemi, which focuses on complementary dual MOSFET solutions. The VEC8 package provides a compact footprint compared to discrete components. Similar parts include the VEC2616 without the specific tape-and-reel suffix or other variants like the VEC2616-TL-W.
Replacement Considerations
Direct substitutes include the VEC2616 and VEC2616-TL-W from onsemi. Verify that alternative complementary dual MOSFETs from other manufacturers maintain compatible pinouts and electrical parameters such as the 60V breakdown voltage and similar on-resistance values.
