VEC2616-TL-W

Overview

The VEC2616-TL-W is a complementary dual power MOSFET manufactured by onsemi, designed for general-purpose switching applications. The device integrates an N-channel and a P-channel MOSFET within a single package to facilitate efficient half-bridge configurations. Key electrical parameters include a drain-source voltage rating of 60V for both channels. The N-channel configuration supports a continuous drain current of 3A with a maximum on-resistance of 80mΩ. The complementary P-channel unit provides a continuous drain current of -2.5A and exhibits a maximum on-resistance of 137mΩ. These characteristics define the component's capability in low-voltage power management circuits.

Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs into a single compact package
• Optimized for general-purpose switching applications requiring half-bridge topologies
• Designed for efficient power management with low on-resistance characteristics

Applications

• General-purpose switching devices
• Half-bridge driver circuits
• Low-voltage power management systems

Part Context

The VEC2616-TL-W belongs to the VEC series of complementary dual MOSFETs from onsemi. This series is engineered to provide matched performance between N-channel and P-channel units, simplifying circuit design for synchronous rectification and high-side/low-side driving requirements where space efficiency is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should verify pinout compatibility and thermal performance when considering alternative components from other manufacturers.