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Product Detailed Parameters
- Description：NCH+NCH 1.8 DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The VEC2820-TL-E is a composite semiconductor device integrating an N-channel silicon MOSFET and a Schottky barrier diode within a single package. The MOSFET section provides a drain-to-source voltage rating of 20 V and a continuous DC drain current capability of 3 A, with a maximum pulse current of 12 A. It supports low-voltage drive levels down to 1.8 V. The integrated Schottky barrier diode features a repetitive peak reverse voltage of 15 V and an average output current rating of 1 A. The component utilizes the CPH surface-mount package.
Feature Summary
- Composite structure combining an N-channel MOSFET and a Schottky barrier diode for high-density mounting.
- Optimized for low-voltage logic control with a 1.8 V drive specification.
- Integrated Schottky diode offers short reverse recovery time and low forward voltage drop.
Applications
- High-density power switching circuits
- Low-voltage synchronous rectification applications
- General-purpose switching devices in consumer electronics
Procurement Notes
Verify the manufacturer origin carefully, as the original datasheet identifies SANYO Semiconductor Co., Ltd. as the producer. Confirm that the specific suffix '-TL-E' corresponds to the required tape-and-reel packaging configuration. Ensure the component meets RoHS compliance requirements for the intended market before finalizing procurement orders.
Selection Notes
Select this component when space constraints require a combined MOSFET and freewheeling diode solution. Verify that the circuit operating voltage remains below the 20 V drain-to-source limit. Ensure the gate drive signal can reach at least 1.8 V to achieve optimal on-state resistance performance. Check thermal management requirements against the 0.9 W allowable power dissipation rating.
Part Context
This part belongs to the VEC series of composite devices manufactured by SANYO Semiconductor. These components are designed to replace discrete MOSFET and diode pairs, reducing footprint and parasitic inductance in power stages. The VEC2820 specifically targets applications requiring efficient low-voltage switching with integrated body-diode-like functionality but with superior Schottky characteristics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.
