VF30100C-M3/4W

Diode Arrays Overview

The VF30100C-M3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 15 A per diode. The device utilizes ITO-220AB packaging, providing isolation between the terminal and heatsink. Key electrical characteristics include a maximum instantaneous forward voltage of 0.80 V at 15 A and a peak forward surge current rating of 160 A.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• ITO-220AB package provides electrical isolation from the heatsink
• High efficiency operation suitable for high frequency converters
• Low thermal resistance for effective heat dissipation

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the ITO-220AB package type and tube delivery mode. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing standards. Cross-reference the document number 89010 to access the latest technical specifications and mechanical data before finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier with 100 V blocking capability is required. The ITO-220AB package is ideal for applications needing electrical isolation between the mounting surface and the circuit terminals. Consider the 15 A continuous current rating and low forward voltage characteristics for optimizing system efficiency in switching power supply designs.

Diode Arrays Part Context

This part belongs to the V30100C series of dual high voltage TMBS rectifiers. Other variants in this family include the V30100C-E3/4W (TO-220AB), VB30100C-E3/4W (D2PAK), and VI30100C-E3/4W (TO-262AA). All share identical electrical ratings but differ in physical package dimensions and mounting configurations.

Diode Arrays Replacement Considerations

Direct replacements within the same family include V30100C-E3/4W, VB30100C-E3/4W, and VI30100C-E3/4W. Verify that the substitute package matches the PCB footprint and thermal management requirements of the original design.

Diode Arrays FAQ

What is the maximum junction temperature for the VF30100C?

The operating junction and storage temperature range is -40 °C to +150 °C.

Does the VF30100C provide isolation from the heatsink?

Yes, the ITO-220AB package provides isolation voltage from the terminal to the heatsink.

What is the peak forward surge current rating?

The peak forward surge current (IFSM) is rated at 160 A for an 8.3 ms single half sine-wave superimposed on rated load.