VF40100C-E3/4W

Diode Arrays Overview

The VF40100C-E3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with two independent diodes housed in an ITO-220AB package. The device supports a maximum repetitive peak reverse voltage of 100 V and provides a total maximum average forward rectified current of 40 A, rated at 20 A per diode. Key electrical characteristics include a peak forward surge current capability of 250 A and a maximum junction temperature of 150 °C. The component utilizes low thermal resistance design for efficient heat dissipation.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Designed for high efficiency operation within switching power supplies and high-frequency converters.
• Complies with MSL level 1 standards and passes the JESD 201 class 1A whisker test.

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and delivery mode. Confirm that the ITO-220AB package variant matches the required mechanical footprint and mounting torque specifications. Ensure compliance with RoHS requirements and material categorization standards before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high-efficiency applications. The ITO-220AB package offers through-hole mounting suitable for general-purpose industrial electronics. Consider the thermal resistance characteristics and derating curves to ensure adequate heat sinking for continuous 20 A per diode operation.

Diode Arrays Part Context

This part belongs to the V40100C family of Dual High Voltage Trench MOS Barrier Schottky Rectifiers. The series includes variants such as V40100C, VB40100C, and VI40100C, which differ primarily in their physical package styles including TO-220AB, D2PAK, and TO-262AA. All variants share identical electrical ratings and TMBS technology.

Diode Arrays Replacement Considerations

Direct substitutes within the same family include V40100C-E3/4W, VB40100C-E3/4W, and VI40100C-E3/4W. Cross-package replacements require verification of mechanical dimensions and thermal performance characteristics.

Diode Arrays FAQ

What is the typical forward voltage drop at 5 A?

The typical instantaneous forward voltage is 0.47 V at an forward current of 5 A and a junction temperature of 25 °C.

Does the component meet moisture sensitivity level requirements?

Yes, the device meets MSL level 1 per J-STD-020, with a LF maximum peak soldering temperature of 245 °C for the TO-263AB package.

What is the non-repetitive avalanche energy rating?

The non-repetitive avalanche energy is rated at 230 mJ per diode at a junction temperature of 25 °C with an inductance of 90 mH.