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VM0550-2F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 100V 590A MODULE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for VM0550-2F
- Description：MOSFET N-CH 100V 590A MODULE
- Series：HiPerFET™
- Mfr：IXYS
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：590A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：2.1mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：2000 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：50000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2200W
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：Module
- Package / Case：Module
Single FETs, MOSFETs datasheet and documents for VM0550-2F
Single FETs, MOSFETs Overview
The VM0550-2F is an N-channel power MOSFET module manufactured by IXYS. It features a drain-to-source voltage rating of 100V and supports a continuous drain current of 590A at case temperature. The device exhibits a maximum on-resistance of 2.1 mΩ at 500mA with a gate drive of 10V. Total gate charge is specified at 2000nC under the same conditions. This component is designed for high-power chassis mounting applications.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode metal oxide semiconductor field effect transistor
- High current handling capability suitable for heavy-duty power conversion
- Low on-state resistance to minimize conduction losses
- Chassis-mountable package design for efficient thermal management
Single FETs, MOSFETs Applications
- Industrial motor drives
- High-power DC-DC converters
- Welding equipment power stages
Single FETs, MOSFETs Procurement Notes
Verify the part status as obsolete before procurement planning. Confirm compatibility with existing chassis mounting hardware and thermal interface materials. Ensure gate drive circuits support the required 10V logic levels and provide sufficient peak current to manage the 2000nC gate charge effectively during switching transitions.
Single FETs, MOSFETs Selection Notes
Select this module when high current capacity and low voltage drop are critical requirements. Evaluate thermal performance based on the specific chassis cooling capabilities, as the device relies on external heat sinking. Compare total gate charge against available driver strength to ensure adequate switching speeds without excessive drive power consumption.
Single FETs, MOSFETs Part Context
IXYS Corporation specializes in power semiconductors including MOSFETs and IGBTs. The company focuses on efficiency improvements in power systems. This module represents their discrete semiconductor offerings designed for robust industrial and commercial power electronics applications requiring reliable high-current switching.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal specifications if considering alternative manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
