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The IXYS VMK90-02T2 is a dual N-channel enhancement mode power MOSFET module featuring a common source configuration. It provides a drain-source voltage (VDSS) of 200 V and a continuous drain current (ID25) of 83 A at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 25 mΩ. Packaged in the JEDEC TO-240 AA standard format, it utilizes direct copper bonded Al2O3 ceramic technology for thermal management. Key electrical parameters include a gate threshold voltage of 2 to 4 V, total gate charge of 380 to 450 nC, and an isolation voltage rating of 3000 Vrms.
Verify the specific ordering suffix 'T2' against the manufacturer's latest documentation to confirm packaging details. Ensure that the required mounting torque falls within the specified range of 2.5 to 4.0 Nm for M5 or 10-32 UNF terminals. Confirm compliance with relevant safety standards if the application requires certified isolation ratings.
Select this component when a dual N-channel configuration with a common source is required to reduce board space. The low on-resistance and high current capability make it suitable for high-power density applications. Consider the thermal resistance values and the need for appropriate heat transfer paste to achieve optimal junction-to-case thermal performance.
This module belongs to the IXYS dual power MOSFET family, designed for robust industrial and commercial power conversion systems. It integrates two discrete MOSFETs into a unified assembly, simplifying circuit layout compared to using separate components. The design emphasizes reliability through standardized packaging and proven semiconductor processes.
No public confirmed substitute part numbers are available in the provided documentation.
The module offers an isolation voltage of 3000 Vrms for one second and 2500 Vrms for one minute at 50/60 Hz.
Pins 1 and 3 serve as Drains, Pin 2 is the Common Source, Pins 5 and 6 are Gates, and Pins 4 and 7 are Kelvin Sources.
The maximum allowable acceleration is 50 m/s².