VMM1500-0075P

$187.93

Description：MOSFET 2N-CH 75V 1500A Y3-LI
Series：-

SKU:e6c37b769b83 Category: FET, MOSFET Arrays Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 75V 1500A Y3-LI
Series：-
Mfr：IXYS
Package：Box
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：75V
Current - Continuous Drain (Id) @ 25°C：1500A
Rds On (Max) @ Id, Vgs：0.8mOhm @ 1200A, 10V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：2480nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Y3-Li
Supplier Device Package：Y3-Li
Grade：-
Qualification：-

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VMM1500-0075P

Overview

The VMM1500-0075P is a dual power MOSFET module from IXYS featuring a Phaseleg configuration. It provides a drain-source voltage (VDSS) of 75 V and a continuous drain current (ID25) of 1500 A at 25°C case temperature. The maximum on-state resistance (RDSon) is 0.55 mΩ, with a gate charge (Qg) of 2480 nC. Thermal resistance junction-to-case (RthJC) is 0.06 K/W. The module supports an isolated DCB ceramic base plate and operates within a junction temperature range of -40°C to +175°C.

Feature Summary

Trench MOSFET technology providing low on-state resistance
Optimized intrinsic reverse diode for efficient switching
Low inductive current path design for high-speed applications
Kelvin source terminals facilitate easy drive circuit connection

Applications

Main and auxiliary AC drives of electric vehicles
Four-quadrant DC drives
Power supplies with low input voltage such as fuel cells or solar cells

Procurement Notes

Verify the specific datasheet revision and electrical limits against the manufacturer's official documentation before integration. Confirm that external lead current limitations are accounted for in the system design. Ensure mounting torque specifications for M6 terminals are strictly followed to maintain thermal performance and mechanical integrity.

Selection Notes

Select this component for high-power density converters requiring robust current handling capabilities. Evaluate the thermal management requirements based on the specified RthJC value. Consider the package dimensions and screw connection requirements for the PCB layout and housing design. Verify compatibility with the required gate drive voltages and isolation standards.

Part Context

This module belongs to the VMM series of dual power MOSFET modules designed by IXYS. It utilizes trench technology to achieve high current density and low conduction losses. The device integrates two MOSFETs and their associated body diodes into a single insulated package suitable for bridge configurations.