VMM300-03F

Overview

The VMM300-03F is a dual N-channel MOSFET array from the HiPerFET series, manufactured by IXYS. It utilizes Y3-DCB base-mount packaging for high-power applications. Key electrical parameters include a drain-source breakdown voltage (Vdss) of 300V and a continuous drain current (Id) of 290A at 25°C. The device features a maximum on-resistance (Rds(on)) of 8.6 milliohms at 145A and 10V gate drive. Gate charge (Qg) is 1440nC at 10V, with an input capacitance (Ciss) of 40000pF at 25V. Power dissipation reaches 1500W, operating within a junction temperature range of -40°C to 150°C.

Feature Summary

• Dual N-channel configuration integrated into a single Y3-DCB module for compact high-current designs.
• High thermal efficiency enabled by direct copper bond (DCB) substrate technology.
• Optimized low on-resistance characteristics for reduced conduction losses in power conversion.
• Robust avalanche rating capability inherent to the HiPerFET family architecture.

Applications

• Industrial motor drives and inverters
• Uninterruptible power supply (UPS) systems
• Photovoltaic solar inverters

Procurement Notes

Verify component status carefully as this specific part number has been marked as obsolete or discontinued in recent distributor records. Confirm availability through official IXYS channels or authorized secondary markets. Ensure compatibility with existing Y3-DCB mounting infrastructure if replacing active inventory. Request latest datasheets to confirm pinout consistency before integration.

Selection Notes

Select this module when high current density and low thermal resistance are required in a base-mounted form factor. The dual configuration allows for parallel operation or half-bridge topologies without separate discrete matching. Consider the 300V rating for medium-voltage DC bus applications. Evaluate thermal management requirements given the 1500W dissipation capability and ensure heatsink design supports the Y3-DCB footprint constraints.

Part Context

This component belongs to the IXYS HiPerFET family, known for high-performance silicon power MOSFETs. The Y3-DCB package integrates the die directly onto a ceramic substrate with copper terminals, offering superior thermal performance compared to standard plastic packages. This series targets demanding industrial and renewable energy applications requiring high reliability and efficient power handling.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Due to the obsolete status indicated in distributor records, direct cross-referencing requires consulting manufacturer obsolescence notices or equivalent technical specifications from alternative suppliers.