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VP0104N3-G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET P-CH 40V 250MA TO92-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for VP0104N3-G
- Description：MOSFET P-CH 40V 250MA TO92-3
- Series：-
- Mfr：Microchip Technology
- Package：Bag
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：250mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Single FETs, MOSFETs datasheet and documents for VP0104N3-G
Single FETs, MOSFETs Overview
The VP0104N3-G is a P-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of -40 V and a maximum static on-state resistance of 8 Ω at a gate-source voltage of -10 V. The device supports a continuous on-state drain current of -500 mA under specified conditions. It operates within an ambient temperature range of -55°C to +150°C and utilizes a 3-lead TO-92 package.
Single FETs, MOSFETs Feature Summary
- Vertical DMOS structure providing high input impedance and positive temperature coefficient
- Integral source-drain diode for simplified circuit design
- Free from secondary breakdown and thermal runaway
- Low power drive requirement with fast switching speeds
Single FETs, MOSFETs Applications
- Motor controls
- Converters
- Amplifiers
- Switches
- Power supply circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix N3 to confirm the 3-lead TO-92 package configuration and bulk media type. Ensure compliance with RoHS standards as indicated by the G suffix. Confirm availability through authorized Microchip representatives, as distribution channels may vary by region.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low threshold voltage and high breakdown voltage in a single-channel configuration. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the required gate drive voltage aligns with the specified thresholds for optimal on-state performance.
Single FETs, MOSFETs Part Context
This part belongs to the VP0104 family of P-Channel Enhancement-Mode Vertical DMOS FETs. These devices are designed for switching and amplifying applications where low input capacitance and fast switching speeds are critical. The vertical DMOS technology ensures robust power handling capabilities comparable to bipolar transistors while maintaining MOSFET advantages.
Single FETs, MOSFETs Replacement Considerations
Consult official Microchip documentation for verified substitute part numbers. Cross-referencing should be performed based on electrical specifications and package compatibility.
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