VQ1001P-E3

VQ1001P-E3

$34.00
  • Description:MOSFET 4N-CH 30V 0.83A 14DIP
  • Series:-

SKU:a79ba25f707a Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 30V 0.83A 14DIP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:830mA
  • Rds On (Max) @ Id, Vgs:1.75Ohm @ 200mA, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:110pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:-
  • Supplier Device Package:14-DIP
  • Grade:-
  • Qualification:-

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VQ1001P-E3

Overview

The VQ1001P-E3 is a quad N-channel MOSFET array manufactured by Vishay Siliconix. It features four independent logic-level gate channels within a single package, designed for low-voltage applications. The device supports a drain-to-source voltage of 30V and provides a continuous drain current of 830mA at 25°C. Packaged in a 14-DIP through-hole configuration, it utilizes silicon technology and includes an E3 suffix indicating lead-free construction compliant with RoHS standards.

Feature Summary

  • Integrates four independent N-channel MOSFETs into a single component to reduce board space.
  • Features logic-level gates optimized for direct interface with standard digital logic outputs.
  • Provides high switching density through a compact 14-DIP through-hole package.

Applications

  • Low-voltage signal switching circuits
  • Logic level translation interfaces
  • Multi-channel power distribution modules

Procurement Notes

Verify the specific ordering suffix carefully when sourcing replacements. Confirm that the target component matches the exact pinout and electrical ratings of the original VQ1001P-E3. Ensure compliance with environmental regulations regarding lead-free materials if required by the final assembly specifications.

Selection Notes

Select this component for designs requiring multiple isolated N-channel switches in a low-voltage environment. The logic-level gate characteristic allows for efficient control using standard 3.3V or 5V logic signals without additional driver circuitry, simplifying the overall system architecture.

Part Context

This part belongs to the VQ series of multi-channel MOSFET arrays from Vishay Siliconix. These devices are engineered to consolidate multiple switching functions into a single footprint, offering a cost-effective solution for complex switching requirements compared to using discrete individual transistors.

Replacement Considerations

Public confirmed substitute part numbers: VQ1001P-2

VQ1001P-E3VQ1001P-E3
$34.00
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