VRF2933

Overview

The VRF2933 is a gold-metallized silicon n-channel RF power MOSFET designed for broadband commercial and military applications. It delivers 300 W output power with 25 dB typical gain at 30 MHz under 50 V bias conditions. The device features an improved ruggedness rating with a drain-source breakdown voltage of 170 V. It supports a 70:1 load VSWR capability and operates within a junction temperature range up to 200 °C.

Feature Summary

• Gold metallization and nitride passivation for enhanced reliability
• High voltage tolerance with 170 V drain-source breakdown
• Thermally enhanced package design for lower junction temperatures
• Capable of sustaining 70:1 load VSWR without degradation

Applications

• Broadband commercial RF power amplification
• Military RF power amplification
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific part number suffix against official Microchip documentation to confirm configuration details. Ensure handling procedures account for the beryllium oxide ceramic content in the M177 package to prevent exposure to toxic dust during mounting or modification.

Selection Notes

Select this component for high-power RF applications requiring robust performance and stability. Consider the matched pair variant if gate-source threshold voltage matching between devices is required for balanced circuit operation.

Part Context

This device serves as a high-voltage replacement for the SD2933 model. It belongs to the family of RF power transistors manufactured by Microchip Technology, utilizing silicon technology optimized for large-signal operations up to 150 MHz.

Replacement Considerations

The datasheet identifies the VRF2933 as a direct high-voltage replacement for the SD2933.

FAQ

What does the MP suffix indicate in the part number?

The MP suffix specifies a matched pair where the gate-source threshold voltage (VGS(TH)) is matched between the two parts.

Is the device RoHS compliant?

Yes, the VRF2933 is RoHS compliant.