VS-3C08ED07T-M3/I

$2.69

Description：RF DIODE SCHOTTKY 650V 79W SMPD
Series：-

SKU:95addce6b842 Category: RF Diodes Brand: Vishay

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Product introduction

Product Detailed Parameters

Description：RF DIODE SCHOTTKY 650V 79W SMPD
Series：-
Mfr：Vishay
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：Schottky - Single
Voltage - Peak Reverse (Max)：650V
Current - Max：8:00 AM
Capacitance @ Vr, F：34pF @ 400V, 1MHz
Resistance @ If, F：-
Power Dissipation (Max)：79 W
Operating Temperature：-55°C ~ 175°C (TJ)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), Variant
Supplier Device Package：SMPD
Grade：-
Qualification：-

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VS-3C08ED07T-M3/I

Overview

The Vishay VS-3C08ED07T-M3/I is a 650 V Power SiC Gen 3 Merged PIN Schottky Diode rated for an 8 A continuous forward current. It utilizes SMPD 2L surface-mount packaging with a typical height of 1.7 mm and a minimum creepage distance of 3.6 mm. The device features a maximum operating junction temperature of 175 °C, a typical forward voltage of 1.30 V at 8 A, and a reverse leakage current of 25 μA at 175 °C. Thermal resistance from junction to mount ranges from 1.45 to 1.90 °C/W.

Feature Summary

MPS structure provides high ruggedness against forward current surge events
Positive VF temperature coefficient facilitates easy paralleling
Virtually no recovery tail and no switching losses ensure temperature invariant switching behavior

Applications

AC/DC PFC circuits
DC/DC ultra high frequency output rectification in FBPS converters
DC/DC ultra high frequency output rectification in LLC converters

Procurement Notes

Verify the specific ordering suffix 'I' corresponds to the 2000-unit reel delivery mode as documented in the official Vishay datasheet. Confirm that the component meets halogen-free, RoHS-compliant, and termination lead (Pb)-free requirements before finalizing procurement specifications.

Selection Notes

Select this component when designing for hard switching applications requiring high efficiency over a wide temperature range. Ensure the thermal design accommodates the specified junction-to-mount thermal resistance values and verify that the 650 V blocking voltage aligns with the circuit's peak repetitive reverse voltage requirements.

Part Context

This part belongs to the Vishay eSMP® Series of wide band gap SiC based diodes. It is specifically engineered for high performance and ruggedness, serving as an alternative to silicon ultrafast recovery devices in demanding power electronics environments.