VS-3C15ET12S2L-M3

$7.11

Description：DIODE SIL CARB 1200V 15A TO263AB
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3f14304f5576 Category: Single Diodes Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

VS-3C15ET12S2L-M3 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SIL CARB 1200V 15A TO263AB. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for VS-3C15ET12S2L-M3

Description：DIODE SIL CARB 1200V 15A TO263AB
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：15A
Voltage - Forward (Vf) (Max) @ If：1.5 V @ 15 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：75 µA @ 1200 V
Capacitance @ Vr, F：56pF @ 800V, 1MHz
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB (D2PAK)
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for VS-3C15ET12S2L-M3

VS-3C15ET12S2L-M3

Single Diodes Overview

The VS-3C15ET12S2L-M3 is a 1200 V Gen 3 Power SiC Merged PIN Schottky Diode rated for 15 A continuous forward current. It utilizes thin wafer technology to improve forward voltage and efficiency, featuring a positive VF temperature coefficient that facilitates easy paralleling. The device operates with virtually no recovery tail or switching losses and maintains temperature-invariant switching behavior. It supports a maximum operating junction temperature of 175 °C and meets JESD 201 class 1A whisker test requirements.

Single Diodes Feature Summary

MPS structure provides high ruggedness to forward current surge events
High CTI molding compound ensures excellent electrical insulation at relevant working voltages
Minimum creepage and clearance distances are 5.2 mm and 5.4 mm respectively

Single Diodes Applications

AC/DC PFC circuits
DC/DC ultra high frequency output rectification in FBPS converters
LLC converters

Single Diodes Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm packaging orientation and environmental compliance details. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions. Validate component suitability for target applications through independent technical assessment prior to integration.

Single Diodes Selection Notes

Select this component for applications requiring hard switching performance and efficient operation across wide temperature ranges. Consider its superior ruggedness against silicon ultrafast recovery limitations. Evaluate thermal constraints based on case temperatures and power dissipation limits defined in the datasheet specifications.

Single Diodes Part Context

This diode belongs to Vishay's third-generation Silicon Carbide product line designed for high-performance power electronics. It serves as an advanced alternative to traditional silicon devices, offering enhanced efficiency and reliability in demanding environments where high voltage and fast switching speeds are critical operational parameters.