VS-3C16ED07T-M3/I

Overview

The Vishay VS-3C16ED07T-M3/I is a 650 V Power SiC Gen 3 Merged PIN Schottky Diode rated for a continuous forward current of 16 A. It utilizes SMPD 2L surface-mount packaging with a typical height of 1.7 mm and a minimum creepage distance of 3.6 mm. The device features a maximum operating junction temperature of 175 °C, a typical forward voltage of 1.3 V at 16 A, and a reverse leakage current of 1 µA at rated voltage. It supports non-repetitive peak surge currents up to 104 A and operates within a temperature range of -55 °C to +175 °C.

Feature Summary

• MPS structure provides high ruggedness against forward current surge events
• Positive VF temperature coefficient facilitates easy paralleling
• Virtually no recovery tail and no switching losses ensure temperature invariant switching behavior
• Thin wafer technology improves forward voltage drop and efficiency

Applications

• AC/DC PFC circuits
• DC/DC ultra high frequency output rectification in FBPS converters
• DC/DC ultra high frequency output rectification in LLC converters

Procurement Notes

Verify the specific ordering suffix /I corresponds to the 13-inch diameter plastic tape and reel delivery mode with a base quantity of 2000 units. Confirm that the component meets JESD 201 class 2 whisker test requirements and complies with RoHS directives. Ensure thermal management designs account for the specified junction-to-mount thermal resistance values under actual operating conditions.

Selection Notes

Select this component when designing systems requiring hard switching capabilities and efficient operation across wide temperature ranges. The SMPD 2L package offers a low profile suitable for space-constrained applications. Evaluate the 16 A continuous current rating against peak load requirements and verify that the 650 V blocking voltage exceeds the maximum circuit transient voltages.

Part Context

This part belongs to the Vishay eSMP® series of Generation 3 Silicon Carbide diodes. It is designed as an alternative to silicon ultrafast recovery diodes, offering superior performance in high-speed switching environments. The device integrates merged PIN Schottky technology on SiC wide band gap material to enhance overall system efficiency.

Replacement Considerations

Direct pin-compatible replacements within the same Vishay family include variants with different current ratings such as the VS-3C08EV07T-M3/I or VS-3C04EV07T-M3/I, provided the lower current ratings meet the application's electrical demands.