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VS-3C20ET12S2L-M3 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SIL CARB 1200V 20A TO263AB. Review the specifications below when checking this part for your BOM.
Single Diodes specifications for VS-3C20ET12S2L-M3
- Description：DIODE SIL CARB 1200V 20A TO263AB
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：20A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：110 µA @ 1200 V
- Capacitance @ Vr, F：73pF @ 800V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AB (D2PAK)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Single Diodes datasheet and documents for VS-3C20ET12S2L-M3
Single Diodes Overview
The VS-3C20ET12S2L-M3 is a Gen 3 Power SiC Merged PIN Schottky Diode rated for 1200 V and 20 A. It utilizes thin wafer technology to improve forward voltage (VF) and efficiency, featuring a positive VF temperature coefficient that facilitates easy paralleling. The device exhibits virtually no recovery tail and negligible switching losses with temperature-invariant switching behavior. It operates at junction temperatures up to 175 °C and meets JESD 201 class 1A whisker test requirements.
Single Diodes Feature Summary
- MPS structure provides high ruggedness against forward current surge events
- High CTI molding compound ensures excellent electrical insulation at relevant working voltages
- Minimum creepage distance of 5.2 mm and clearance distance of 5.4 mm
Single Diodes Applications
- AC/DC PFC circuits
- DC/DC ultra high frequency output rectification in FBPS converters
- LLC converters
Single Diodes Procurement Notes
Verify the specific ordering suffix 'M3' confirms halogen-free, RoHS-compliant status and lead-free termination. Confirm the package type matches D2PAK 2L (TO-263AB 2L) and check the minimum order quantity associated with the 800 per reel packaging configuration.
Single Diodes Selection Notes
Select this component for applications requiring hard switching and efficient operation over a wide temperature range. It serves as an optimum choice for designs suffering from Silicon ultrafast recovery behavior. Ensure thermal management accommodates the specified maximum operating junction temperature of 175 °C.
Single Diodes Part Context
This diode belongs to Vishay's Gen 3 Silicon Carbide product line. It is designed for high performance and ruggedness in power electronics. The device is housed in a surface mountable D2PAK 2L case with matte tin plated leads solderable per J-STD-002 and JESD 22-B102 standards.
Single Diodes Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
Single Diodes FAQ
What is the typical forward voltage drop at 25 °C?
The typical forward voltage drop is 1.35 V at an instantaneous forward current of 20 A and a junction temperature of 25 °C.
Does the device exhibit reverse recovery charge?
The device features virtually no recovery tail and no switching losses due to its majority carrier Schottky technology on SiC material.
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