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The VS-50MT060PHTAPbF is a half bridge IGBT module utilizing Trench technology, rated for 600 V collector-emitter voltage and 121 A continuous collector current at 25 °C. It integrates HEXFRED antiparallel diodes with ultrasoft reverse recovery characteristics. The device features an optional SMD NTC thermistor (30 kΩ at 25 °C) and operates within a junction temperature range of -40 °C to 150 °C. Electrical specifications include a typical VCE(on) of 1.41 V at 50 A and a maximum gate threshold voltage of 5.3 V. The module provides 2500 VRMS isolation and is housed in an MTP package.
Verify the specific ordering suffix against official documentation to confirm component attributes. Ensure that any modifications to the part number are explicitly supported by manufacturer data before procurement. Confirm compliance requirements such as lead-free status and material categorization definitions directly from the source datasheet.
Select this module for high-speed operation up to 100 kHz where low EMI and reduced snubbing requirements are critical. Evaluate the thermal impedance curves to ensure adequate heatsinking for the intended power dissipation. Verify that the required collector current and voltage ratings align with the application's peak and continuous load conditions.
This component belongs to Vishay's Half Bridge IGBT MTP series. It is designed to replace older generation modules in high-frequency inverter circuits. The MTP package allows direct mounting to heatsinks, facilitating efficient thermal management in compact industrial power electronics designs.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and thermal resistance values when considering cross-references. Ensure that any substitute maintains the required 600 V rating and half-bridge configuration.