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Product Detailed Parameters
- Description：IGBT MODULE 600V 114A 658W MTP
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tray
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：12-MTP Module
- Supplier Device Package：MTP
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：114 A
- Power - Max：658 W
- Current - Collector Cutoff (Max)：400 µA
- Input Capacitance (Cies) @ Vce：7.1 nF @ 30 V
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Overview
The VS-50MT060WHTAPBF is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay General Semiconductor - Diodes Division. It features a 12-pin MTP package with flange mount configuration and isolated case connection. The device supports a collector-emitter breakdown voltage of 600 V and a continuous collector current of 114 A. It is designed for series connected, center tap applications with two elements, incorporating built-in diodes and a thermistor. The maximum power dissipation is rated at 658 W, with a maximum operating temperature of 125 °C.
Feature Summary
- Integrated thermistor for thermal monitoring
- Built-in diode functionality within the module structure
- Isolated case connection for mounting flexibility
Applications
- Series connected power conversion circuits
- Center tap inverter configurations
- Industrial motor drive systems
Procurement Notes
Verify the specific datasheet version and revision history before procurement to ensure compatibility with design requirements. Confirm that the MTP package dimensions and pinout match the target PCB or busbar layout. Check for any RoHS compliance documentation if environmental regulations apply to the final assembly. Ensure the supplier provides traceability records for the semiconductor components.
Selection Notes
Select this component when a 600 V IGBT with integrated thermal sensing is required for high-current applications up to 114 A. The inclusion of a built-in thermistor simplifies protection circuitry design compared to discrete solutions. Consider the 12-pin MTP package constraints for mechanical integration and heat sinking strategies. Evaluate the 658 W power dissipation rating against the expected thermal management capabilities of the system enclosure.
Part Context
This part belongs to the broader category of insulated gate bipolar transistor modules from Vishay. It shares the MTP packaging style with other high-power devices in the manufacturer's portfolio. The specific combination of 600 V rating and integrated thermistor distinguishes it from standard IGBT modules lacking thermal feedback mechanisms.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires matching electrical ratings, package type, and pinout configuration through official manufacturer substitution guides.
