VS-CPV362M4UPBF

Overview

The VS-CPV362M4UPBF is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Vishay Semiconductors. It features a Hex configuration and utilizes an IMS-2-13 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -40°C to +150°C. The component is part of the CPV series, utilizing standard Si technology for power switching applications.

Feature Summary

• Hex configuration for integrated circuit protection
• High thermal efficiency via IMS-2-13 substrate
• Through-hole mounting capability

Applications

• Motor drive circuits
• Power supply units
• Industrial inverter systems

Procurement Notes

Verify the exact suffix against official Vishay documentation to confirm pinout and electrical tolerances. Ensure the IMS-2-13 package footprint matches the PCB design. Confirm RoHS compliance status through the manufacturer's current datasheet before finalizing procurement specifications.

Selection Notes

Select this component when a 600 V IGBT with integrated protection is required in a through-hole assembly. The Hex configuration simplifies board layout by combining multiple devices. Verify that the thermal management solution accommodates the IMS-2-13 package characteristics and the expected operating temperature range up to 150°C.

Part Context

This part belongs to the Vishay CPV series of Hex IGBTs. These components integrate four IGBTs and associated diodes into a single module. The series is designed for compact power electronics designs requiring high reliability and efficient thermal dissipation in industrial applications.

Replacement Considerations

Check Vishay's official cross-reference tools for direct replacements. Ensure any substitute maintains the 600 V rating, Hex configuration, and IMS-2-13 package dimensions for mechanical compatibility.