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The VS-CPV363M4KPBF is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Vishay Semiconductors. It features a Hex configuration and utilizes IMS-2-13 packaging for through-hole mounting. The device supports a maximum collector-emitter voltage (VCEO) of 600 V and a gate-emitter voltage range of -20 V to +20 V. It provides a continuous collector current (Ic) of 11 A. The component operates within a temperature range from -40°C to +150°C junction temperature.
Verify the specific ordering suffix against official Vishay documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with existing thermal management solutions due to the IMS-2-13 form factor. Confirm RoHS compliance status via the manufacturer's current datasheet before finalizing procurement specifications.
Select this component when a 600 V rated IGBT with 11 A continuous current capability is required in a through-hole format. The Hex configuration suggests suitability for compact power modules. Evaluate thermal resistance requirements associated with the IMS-2-13 package for the intended application environment.
This part belongs to the Vishay IGBT transistor category, specifically utilizing silicon technology. It is distinct from diode arrays or TVS diodes also listed under the Vishay Diodes Division. The IMS-2-13 package is a specialized housing often used for power modules requiring robust mechanical mounting and thermal dissipation.
Consult Vishay's official replacement guide for direct equivalents. Verify pinout compatibility and thermal performance metrics when considering alternative manufacturers' 600 V, 11 A IGBTs in similar packages.