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Product Detailed Parameters
- Description：IGBT MODULE 600V 20A 63W IMS-2
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 10A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：19-SIP (13 Leads), IMS-2
- Supplier Device Package：IMS-2
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Power - Max：63 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.1 nF @ 30 V
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Overview
The VS-CPV364M4UPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Vishay Semiconductors. It features a hex configuration and utilizes silicon technology. The device supports a maximum collector-emitter voltage (VCEO) of 600 V and a gate-emitter voltage range of -20 V to +20 V. It provides a continuous collector current of 20 A at 25°C. The component operates within a junction temperature range of -40°C to +150°C. It is housed in an IMS-2-13 package designed for through-hole mounting.
Feature Summary
- Hex IGBT configuration for integrated power switching
- High voltage capability with 600 V collector-emitter rating
- Robust thermal management via flange mount design
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific manufacturer designation, as this part number is associated with Vishay Semiconductors but shares identifiers with International Rectifier/Infineon products. Confirm the exact pinout and datasheet version corresponding to the Vishay manufacturing source before integration. Check for obsolescence status as distributor records indicate discontinuation.
Selection Notes
Select this component for applications requiring a 600 V, 20 A IGBT in a through-hole format. Ensure the thermal design accommodates the IMS-2-13 package constraints. Verify that the gate drive requirements align with the specified +/- 20 V limits. Consider alternative available packages if surface-mount solutions are preferred over the through-hole IMS style.
Part Context
This component belongs to the IGBT transistor category, specifically utilizing silicon technology. It is distinct from Vishay's diode arrays and TVS products. The part represents a legacy or discontinued item within the Vishay portfolio, often cross-referenced with Infineon's CPV series due to historical acquisition relationships.
Replacement Considerations
Publicly confirmed direct substitute part numbers are not available in the provided data. The related part CPV364M4FPBF shares similar electrical ratings but differs in packaging (Flange Mount vs. IMS). Verification of pin compatibility and thermal characteristics is required for any potential replacement.
