VS-ENM040M60P

VS-ENM040M60P

$47.81
  • Description:POWER MODULE
  • Series:*

SKU:4717aee96e26 Category: Brand:

  
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Product Detailed Parameters

  • Description:POWER MODULE
  • Series:*
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Box
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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VS-ENM040M60P

Overview

The VS-ENM040M60P is a half-controlled single-phase bridge power module in the EMIPAK 1B package, integrating an input bridge with thyristors and diodes, a MOSFET boost PFC leg, and a MOSFET half-bridge inverter. It features 800 V rated thyristors and diodes, 600 V rated MOSFETs, and a 600 V Silicon Carbide clamp diode. The module supports a maximum DC output current of 20 A at a sink temperature of 115 °C and a continuous drain current of 40 A for the MOSFETs at 39 °C. Key electrical parameters include a typical on-state voltage of 1.29 V for the thyristors at 20 A and a typical RDS(on) of 37 mΩ for the MOSFETs at 40 A.

Feature Summary

  • Combines thyristor phase control with optimized MOSFET switching for hybrid power conversion applications.
  • Utilizes exposed aluminum oxide substrate to provide low thermal resistance and improved heat dissipation.
  • Employs PressFit pins locking technology to facilitate board mounting without soldering.
  • Integrates a Silicon Carbide clamp diode to enhance switching performance and reduce reverse recovery losses.

Applications

  • Thyristor phase control circuits
  • Power Factor Correction (PFC) stages
  • Half-bridge inverter topologies

Procurement Notes

This component has reached End of Life status as of July 2025. Verification of final availability through authorized distributors or direct manufacturer channels is required before design finalization. Engineers should review the Product Change Notification (PCN) and Obsolescence notices issued by Vishay General Semiconductor - Diodes Division to assess long-term supply risks and transition timelines.

Selection Notes

Selection requires careful evaluation of thermal management due to the module's power density. Designers must ensure the sink temperature remains within specified limits to maintain current ratings, particularly noting the derating curves for both the bridge and MOSFET sections. The PressFit mounting method necessitates specific PCB hole tolerances and mechanical force application to ensure reliable electrical contact and thermal interface integrity.

Part Context

The VS-ENM040M60P belongs to Vishay's EMIPAK 1B series, designed for high-power density applications. This series utilizes MOAT and SiC diode technologies to minimize switching and conduction losses. The package integrates multiple semiconductor functions into a single unit to reduce stray inductances and improve electromagnetic interference (EMI) performance compared to discrete solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End of Life status, engineers should consult Vishay technical support for potential alternative modules with compatible pinouts and electrical characteristics.

VS-ENM040M60PVS-ENM040M60P
$47.81
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