VS-ENW30S120T

Overview

The VS-ENW30S120T is a single-phase bridge rectifier utilizing Silicon Carbide (SiC) diode technology, housed in an EMIPAK 1B press-fit power module. It features a maximum repetitive reverse voltage (VRRM) of 1200 V and supports a maximum output current (IO) of 67 A at a sink temperature of 25 °C, or 30 A at 138 °C. The typical forward voltage drop (VFM) is 1.35 V at 30 A, with a total capacitive charge (QC) of 118 nC. The device operates within a junction temperature range of -40 °C to +175 °C and includes an internal NTC thermistor for thermal monitoring.

Feature Summary

• Utilizes exposed Al2O3 substrate for low thermal resistance and high-frequency operation
• Features PressFit pins locking technology for easy mounting and minimized stray parameters
• Includes an integrated NTC thermistor for precise thermal management
• Qualified using AQG324 guideline as reference

Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode applications
• Reverse battery protection

Procurement Notes

Verify the specific ordering suffix 'T' corresponds to the inclusion of the internal NTC thermistor as defined in the datasheet's ordering information table. Confirm that the EMIPAK 1B package dimensions and pin layout match the target PCB footprint. Ensure the application environment supports the required press-fit mounting torque of 2 to 3 Nm for secure connection.

Selection Notes

Select this component when high switching frequencies and low thermal resistance are critical requirements. The SiC diode technology offers superior performance compared to silicon alternatives in high-temperature environments. Consider the 1200 V rating and 30 A continuous current capability at elevated temperatures for robust system design. Verify that the system can accommodate the press-fit installation method rather than traditional screw mounting.

Part Context

This part belongs to Vishay's EMIPAK 1B series of press-fit power modules designed for industrial and automotive applications. The 'EN' prefix indicates the EMIPAK 1B package type, while 'W' denotes the SiC diode full bridge circuit configuration. The '30' signifies the 30 A current rating, and '120' represents the 1200 V voltage rating. The 'T' suffix specifically identifies the version equipped with an internal thermistor.

Replacement Considerations

Direct replacements must match the EMIPAK 1B package, 1200 V rating, and SiC diode technology. Verify if the alternative component requires the same press-fit mounting technique or if mechanical adaptation is needed. Check if an internal thermistor is mandatory for the specific application thermal monitoring strategy.

FAQ

What is the function of the internal NTC thermistor?

The internal NTC thermistor provides real-time thermal monitoring of the module. At 25 °C, it has a resistance of 5000 Ω, allowing for precise tracking of the junction temperature to prevent overheating.

How does the EMIPAK 1B package improve thermal performance?

The EMIPAK 1B package features an exposed Al2O3 substrate which significantly lowers thermal resistance between the junction and the heat sink, enabling efficient heat dissipation during high-current operation.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TJ) for the VS-ENW30S120T is 175 °C.