VS-ENY050C60

$41.24

Description：POWER MODULE
Series：*

SKU:836560652655 Category: IGBT Modules Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

Product Detailed Parameters

Description：POWER MODULE
Series：*
Mfr：Vishay General Semiconductor - Diodes Division
Package：Box
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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VS-ENY050C60

Overview

The VS-ENY050C60 is a 600 V full bridge MOSFET module from Vishay Semiconductors, rated for 50 A continuous drain current. It utilizes the EMIPAK 1B package with PressFit pins and an exposed Al2O3 substrate for low thermal resistance. The device features EF series power MOSFET technology with low input capacitance (7500 pF) and ultra-low gate charge (240 nC). Key electrical parameters include a typical RDS(on) of 37 mΩ at 50 A and 25 °C, rising to 82 mΩ at 150 °C. It supports a maximum operating junction temperature of 150 °C and includes an internal NTC thermistor.

Feature Summary

EMIPAK 1B package with PressFit pins locking technology
Exposed Al2O3 substrate providing improved thermal performance
Optimized layout minimizing stray parameters for better EMI performance
Avalanche energy rated (UIS) capability

Applications

MOSFET full bridge inverter circuits
High-power industrial motor drives
Switched-mode power supplies requiring high voltage isolation

Procurement Notes

Verify component authenticity through authorized Vishay distributors or direct channels. Confirm datasheet revision 02-Aug-2022 matches requirements. Ensure mounting surfaces are flat, smooth, and greased with specified thermal compound (λ = 0.67 W/mK) to achieve rated thermal resistance. Validate that application conditions do not exceed absolute maximum ratings.

Selection Notes

Select this module for applications requiring a complete four-switch bridge configuration in a single package. Consider the 37 mΩ on-resistance for conduction loss calculations at 50 A. Evaluate thermal management needs based on the 0.3 °C/W junction-to-case resistance per switch. Verify compatibility with PressFit assembly processes and required mounting torque of 2 to 3 Nm for M4 screws.

Part Context

This component belongs to the EMIPAK 1B family of press-fit power modules. It integrates four N-channel MOSFETs into a full bridge topology. The 'EN' prefix indicates the EMIPAK 1B package, while 'Y' denotes the full bridge circuit configuration. It is designed as a replacement for discrete MOSFET assemblies in high-current, high-voltage applications.