VS-GA100NA60UP

Description：IGBT MOD 600V 100A 250W SOT227
Series：-

SKU:81c637c92e19 Category: IGBT Modules Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 600V 100A 250W SOT227
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Bulk
IGBT Type：-
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
Input：Standard
NTC Thermistor：No
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-227-4, miniBLOC
Supplier Device Package：SOT-227
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：100 A
Power - Max：250 W
Current - Collector Cutoff (Max)：250 µA
Input Capacitance (Cies) @ Vce：7.4 nF @ 30 V

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VS-GA100NA60UP

Overview

The VS-GA100NA60UP is a Warp 2 Speed IGBT module from Vishay Semiconductors, rated for 600 V collector-emitter breakdown voltage and 100 A continuous collector current at 25 °C. It features an integrated ultrafast diode with a forward voltage of 1.3 V to 1.6 V at 50 A. The device operates within a junction temperature range of -55 °C to +150 °C and utilizes a SOT-227 package. Key electrical parameters include a saturation voltage of 1.8 V at 100 A, total switching loss of 4.4 mJ at 25 °C, and internal emitter inductance of 2.0 nH.

Feature Summary

Ultrafast performance optimized for hard switching up to 40 kHz and resonant mode above 200 kHz
Fully isolated package providing 2500 V AC/RMS isolation between terminals and case
Very low internal inductance typically less than or equal to 5 nH
Industry standard outline compatible with other SOT-227 packages

Applications

Power factor correction (PFC)
Uninterruptible power supplies (UPS)
Switched-mode power supplies (SMPS)
Welding equipment
Induction heating systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm lead-free status and generation code. Ensure the procurement channel provides valid traceability for industrial market qualification. Confirm that the component meets RoHS Directive 2002/95/EC requirements as stated in the datasheet before finalizing orders.

Selection Notes

Select this module when high efficiency is required at frequencies greater than or equal to 20 kHz due to its low conduction and switching losses. Consider the SOT-227 form factor for direct heatsink mounting and easy parallel assembly. Validate thermal resistance values against the specific application's cooling capacity to ensure operation within the maximum junction temperature limits.

Part Context

This component belongs to the Warp 2 Speed IGBT series by Vishay Semiconductors. It represents Generation 4 IGBT technology paired with Generation 2 HEXFRED diodes. The part number structure indicates a 100 A rating, N-type high side chopper configuration, and U-suffix for ultrafast matching diode characteristics within the SOT-227 package family.