VS-GA200HS60S1PBF

Overview

The VS-GA200HS60S1PBF is a half-bridge IGBT module manufactured by Vishay General Semiconductor - Diodes Division. It utilizes Gen 4 IGBT technology and features an INT-A-PAK package for chassis mounting. The device has a maximum collector-emitter voltage (Vces) of 600 V and a continuous collector current (Ic) of 480 A. At 25 °C with a collector current of 200 A, the on-state collector-emitter voltage (Vce(on)) is specified as 1.13 V. The switching speed supports frequencies from DC to 1 kHz.

Feature Summary

• Integrates Gen 4 IGBT technology within a single half-bridge circuit configuration.
• Designed for robust chassis mounting using the INT-A-PAK package format.

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-power inverter systems

Procurement Notes

Verify the specific datasheet version and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the INT-A-PAK mounting requirements align with the thermal management design of the target application system.

Selection Notes

Select this component for applications requiring high current handling up to 480 A and voltage ratings of 600 V. Ensure the operating frequency remains within the DC to 1 kHz range and that the thermal resistance capabilities of the heatsink match the module's dissipation requirements.

Part Context

This part belongs to the VS-GA series of IGBT modules from Vishay General Semiconductor - Diodes Division. These modules are engineered for medium to high-power conversion applications, offering a balance of low conduction losses and reliable switching performance in industrial environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer for direct replacements or cross-reference options based on specific electrical and mechanical constraints.