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The VS-GA200SA60UP is a single Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay General Semiconductor. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 200 A. The device has a power dissipation rating of 500 W and utilizes the SOT-227 chassis mount package. This component is classified as an ultrafast IGBT, optimized for high-speed switching applications.
Verify the obsolete status of this specific part number before initiating any procurement activities. Confirm that the SOT-227 package dimensions and pinout match the target design requirements. Ensure that thermal management solutions are adequate for the 500 W power dissipation rating under the intended load conditions.
Select this component when a single IGBT module with 600 V blocking capability and 200 A current handling is required. Consider the ultrafast switching profile if the application demands high-frequency operation in either hard or resonant topologies. Evaluate the SOT-227 form factor against available chassis space and mounting constraints.
This module belongs to the GA200 series of IGBTs from Vishay General Semiconductor. It serves as a high-power discrete semiconductor solution designed for robust performance in demanding electrical environments. The SOT-227 package provides a standardized mechanical interface for chassis mounting in industrial power equipment.
The VS-GA200HS60S1PBF is a documented alternative within the same product family, offering similar voltage ratings but higher current capacity. Verify compatibility regarding package type and thermal characteristics when substituting.