VS-GB100NH120N

Overview

The VS-GB100NH120N is a single IGBT module manufactured by Vishay General Semiconductor - Diodes Division. It features a 1200 V voltage rating and a continuous collector current capacity of 200 A. The device is designed for chassis mounting within the INT-A-PAK package configuration. It delivers a maximum power dissipation of 833 W, supporting high-power industrial applications requiring robust switching performance.

Feature Summary

• High-voltage insulation capability rated at 1200 V
• High-current handling with 200 A continuous collector current
• Integrated thermal management via INT-A-PAK chassis mount design

Applications

• Industrial motor drives
• Inverter systems
• Power supply units

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the INT-A-PAK mechanical dimensions align with the target chassis layout. Ensure thermal interface material selection supports the 833 W dissipation requirement. Validate that the 1200 V rating meets the circuit's peak voltage demands under all operating conditions.

Selection Notes

Select this component when high voltage and current density are required in a compact form factor. The INT-A-PAK package facilitates efficient heat transfer to cold plates. Consider the 200 A current limit for load matching. Evaluate the 1200 V blocking capability against system transients. This module suits applications where space constraints and thermal efficiency are critical design parameters.

Part Context

This part belongs to Vishay's IGBT module portfolio, specifically engineered for power electronics. The VS-GB series utilizes advanced semiconductor technology to balance switching speed and conduction losses. The INT-A-PAK designation indicates a standardized mechanical footprint for easy assembly into larger power conversion systems.

Replacement Considerations

No public confirmed substitute part numbers are available.