VS-GB200TH120N

Description：IGBT MOD 1200V 360A INT-A-PAK
Series：-

SKU:1798d57d9a2e Category: IGBT Modules Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 360A INT-A-PAK
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Bulk
IGBT Type：-
Configuration：Half Bridge
Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 200A
Input：Standard
NTC Thermistor：No
Operating Temperature：150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Double INT-A-PAK (3 + 4)
Supplier Device Package：Double INT-A-PAK
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：360 A
Power - Max：1136 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：14.9 nF @ 25 V

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VS-GB200TH120N

Overview

The VS-GB200TH120N is a half-bridge IGBT module manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum collector-emitter breakdown voltage of 1200 V and a maximum collector current of 360 A. The module delivers a maximum power rating of 1136 W. The typical on-state collector-emitter voltage (Vce(on)) is specified as 2.35 V at a gate-emitter voltage of 15 V and a collector current of 200 A.

Feature Summary

Integrated half-bridge configuration for efficient power switching applications
High voltage blocking capability suitable for industrial power systems
Robust thermal management design with base mounting construction

Applications

Industrial motor drives
Inverter circuits
Power supply units

Procurement Notes

Verify the obsolete status of this component before procurement planning, as availability may be limited or restricted. Confirm that the INT-A-PAK package dimensions align with existing board layouts. Ensure replacement strategies account for potential lead time extensions due to end-of-life status. Validate technical specifications against current system requirements to avoid integration issues.

Selection Notes

Select this module when a half-bridge topology is required with high voltage ratings. Consider the specific Vce(on) characteristics for thermal calculations. Evaluate the INT-A-PAK footprint compatibility during the design phase. Assess the 1200 V breakdown voltage against peak circuit voltages to ensure adequate safety margins.

Part Context

This component belongs to the VS-GB series of IGBT modules from Vishay. These modules are designed for high-power applications requiring reliable switching performance. The series typically utilizes advanced silicon technology to achieve low conduction losses and robust operation under demanding electrical conditions.