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Product Detailed Parameters
- Description：IGBT MOD 1200V 330A INT-A-PAK
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Double INT-A-PAK (3 + 4)
- Supplier Device Package：Double INT-A-PAK
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：330 A
- Power - Max：1316 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：16.9 nF @ 30 V
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Overview
The VS-GB200TH120U is a half bridge IGBT module manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum collector-emitter breakdown voltage of 1200 V and a maximum collector current of 330 A. The module supports an internal antiparallel diode configuration and operates within a junction temperature range up to 150°C. This component is designed for high-power industrial applications requiring robust switching capabilities.
Feature Summary
- Half bridge configuration with integrated antiparallel diode
- High voltage blocking capability of 1200 V
- High current handling capacity of 330 A
- Industrial grade thermal performance
Applications
- Industrial motor drives
- Inverter systems
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify the specific suffix codes and packaging details against the official datasheet before ordering, as variations may exist. Confirm that the intended application aligns with the module's electrical ratings and thermal requirements. Ensure proper handling procedures are followed due to the sensitive nature of semiconductor components.
Selection Notes
Select this module when a half bridge topology is required for high-power applications. Consider the 1200 V rating and 330 A current capacity to ensure adequate margin for the specific load conditions. Evaluate the thermal management solution needed to maintain the junction temperature within the specified 150°C limit during operation.
Part Context
This IGBT module belongs to Vishay's power semiconductor portfolio, targeting demanding industrial environments. It complements other discrete and modular solutions by providing a compact, high-performance option for power conversion stages. The design emphasizes reliability and efficiency in high-voltage, high-current scenarios typical of modern industrial electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official replacement guide or technical support for compatible alternatives that match the electrical specifications and mechanical footprint.
