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Product Detailed Parameters
- Description：IGBT MODULE 1200V 658W SOT227
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：NPT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.8V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Power - Max：658 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The VS-GB75DA120UP is an Ultrafast IGBT module utilizing NPT Generation V technology, rated at 1200 V collector-emitter voltage and 75 A continuous collector current at 95 °C. It features a typical saturation voltage of 3.3 V at 75 A and 25 °C. The device incorporates HEXFRED low Qrr diodes and operates within a junction temperature range of -40 °C to 150 °C. Packaged in the SOT-227 outline with screw mounting, it provides full isolation and supports switching frequencies from 8 kHz to 60 kHz.
Feature Summary
- NPT Generation V IGBT technology combined with HEXFRED low Qrr diodes for reduced switching energy
- Positive VCE(on) temperature coefficient facilitating easy parallel operation
- Fully isolated package with very low internal inductance (≤ 5 nH typical)
- Industry standard SOT-227 outline compatible with direct heatsink mounting
Applications
- Uninterruptible Power Supplies (UPS)
- Switched Mode Power Supplies (SMPS)
- Welding equipment
- Induction heating systems
Procurement Notes
This component is designated as Not Available for New Designs. Engineers must transition to the recommended replacement part number VS-GB90DA120U for any new product development. Existing production runs should verify stock availability through authorized distributors before initiating design-in processes.
Selection Notes
Selection requires verifying thermal management capabilities against the specified junction-to-case thermal resistance values. Designers must account for the positive temperature coefficient of the saturation voltage when sizing parallel configurations. Ensure gate drive circuits support the required 15 V operating level while respecting the ± 20 V maximum gate-emitter voltage rating.
Part Context
Manufactured by Vishay Semiconductors, this module belongs to the ultrafast IGBT family designed for high-efficiency power conversion. It utilizes silicon technology within a fully isolated SOT-227 package. The device is UL approved under file E78996 and complies with RoHS directives.
Replacement Considerations
Use VS-GB90DA120U as the direct replacement for new designs.
FAQ
What is the reverse bias safe operating area characteristic?
The device exhibits a square RBSOA, ensuring robust performance under clamped inductive load conditions.
How does the device handle heat dissipation?
It features a flat case style allowing direct mounting on a heatsink with a specified mounting torque of 1.3 Nm.
What is the typical total switching loss at 25 °C?
The typical total switching loss is 3.2 mJ under test conditions of IC = 75 A, VCC = 600 V, VGE = 15 V, and Rg = 5 Ω.
