VS-GB75SA120UP

$39.16

Description：IGBT MODULE 1200V 658W SOT227
Series：-

SKU:b0d3657763dd Category: IGBT Modules Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 658W SOT227
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Bulk
IGBT Type：NPT
Configuration：Single
Vce(on) (Max) @ Vge, Ic：3.8V @ 15V, 75A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-227-4, miniBLOC
Supplier Device Package：SOT-227
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：-
Power - Max：658 W
Current - Collector Cutoff (Max)：250 µA
Input Capacitance (Cies) @ Vce：-

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VS-GB75SA120UP

Overview

The VS-GB75SA120UP is a Vishay Semiconductors Ultrafast IGBT utilizing NPT Generation V technology. It features a single switch configuration without an antiparallel diode in a fully isolated SOT-227 package. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC DC) of 75 A at 95 °C. The typical on-state voltage (VCE(on)) is 3.3 V at 75 A and 25 °C. The device supports switching speeds from 8 kHz to 60 kHz with very low internal inductance, typically ≤ 5 nH.

Feature Summary

NPT Generation V IGBT technology providing square RBSOA and positive VCE(on) temperature coefficient
Fully isolated package designed for direct heatsink mounting and parallel operation
Ultrafast switching characteristics optimized for high-frequency power conversion applications

Applications

Uninterruptible Power Supplies (UPS)
Switched Mode Power Supplies (SMPS)
Welding equipment
Induction heating systems

Procurement Notes

This component is designated as Not Available for New Designs. Engineers initiating new projects must utilize the recommended replacement part number provided by the manufacturer. Existing designs should verify supply chain availability through authorized distributors before procurement planning.

Selection Notes

Selection requires verification of thermal management capabilities within the SOT-227 case style. Designers must account for the absence of an integrated antiparallel diode when configuring circuit topologies. Gate drive resistance and clamping voltages should be validated against the specified absolute maximum ratings for reliable operation.

Part Context

The VS-GB75SA120UP belongs to Vishay's ultrafast IGBT portfolio characterized by NPT Generation V technology. It is engineered for robust performance in industrial power electronics, offering improved efficiency compared to standard IGBTs while maintaining compatibility with industry-standard mechanical outlines.