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The VS-GB75YF120N is a Vishay Semiconductors IGBT Fourpack module featuring a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at a case temperature of 67 °C. It utilizes HEXFRED diodes for low reverse recovery charge and switching energy, alongside a positive VCE(on) temperature coefficient. The device operates within an 8 kHz to 30 kHz speed range and includes a copper baseplate with low stray inductance design. Electrical specifications include a typical VCE(on) of 3.4 V at 75 A and a maximum power dissipation of 480 W at 25 °C.
Verify the specific revision date on the datasheet before procurement, as Vishay documents are subject to change without notice. Confirm that the ECONO2 package dimensions match the target PCB layout. Ensure thermal interface materials are compatible with the copper baseplate for optimal junction-to-case thermal resistance.
Select this component when high efficiency and low EMI are required due to the HEXFRED diode technology. The positive temperature coefficient aids in parallel operation stability. Verify that the operating frequency falls within the specified 8 kHz to 30 kHz range for optimal switching loss characteristics.
This part belongs to the Vishay ECONO2 4PACK N Series, designed for industrial market qualification. It integrates four IGBTs and four diodes into a single insulated module. The series emphasizes benchmark efficiency for SMPS applications and space-saving direct mounting capabilities.
Check for updated revisions within the same ECONO2 4PACK family. Verify pinout compatibility if substituting with other Vishay IGBT modules of similar voltage and current ratings.