VS-GB90DA60U

Overview

The VS-GB90DA60U is a Vishay Semiconductors Insulated Gate Bipolar Transistor (IGBT) module utilizing NPT Warp 2 Speed technology with an integrated HEXFRED antiparallel diode. It features a SOT-227 package and supports a collector-emitter voltage of 600 V. The device provides a continuous collector current of 90 A at 90 °C case temperature, with a typical on-state voltage of 2.4 V at 100 A and 25 °C. The integrated diode offers a continuous forward current of 108 A at 90 °C. Designed for high switching frequencies up to 150 kHz, it exhibits very low internal inductance and ultrasoft reverse recovery characteristics.

Feature Summary

• NPT Warp 2 Speed IGBT technology with positive temperature coefficient
• HEXFRED antiparallel diodes with ultrasoft reverse recovery
• Fully isolated package with UL approval E78996
• Very low internal inductance typically less than or equal to 5 nH

Applications

• Uninterruptible Power Supplies (UPS)
• Switched Mode Power Supplies (SMPS)
• Welding equipment
• Induction heating systems

Procurement Notes

Verify the specific revision date and document number against the manufacturer's official datasheet before finalizing procurement specifications. Ensure that thermal interface materials and mounting torque requirements align with the mechanical specifications provided in the documentation. Confirm compliance with material categorization policies if required by the end application standards.

Selection Notes

Select this component for applications requiring high efficiency and reduced snubbing due to low switching losses and EMI. Consider the square RBSOA capability for robust operation under clamped inductive load conditions. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended power dissipation levels at the maximum operating junction temperature.

Part Context

This part belongs to the VS-GB series of Vishay Semiconductors IGBT modules, specifically designed as Generation 5 devices. The 'D' configuration indicates a single switch with an antiparallel diode, while the 'A' suffix denotes the SOT-227 package style. It is part of the Warp 2 Speed product line aimed at improving operating efficiency in power conversion circuits.

Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting with other SOT-227 IGBT modules. Verify that the replacement device meets or exceeds the 600 V voltage rating and 90 A current capacity. Ensure the antiparallel diode characteristics are suitable for the specific circuit requirements.